Coherent Corp. Advances SiC Epitaxy to Enable 10kV Power Devices for AI Datacenters and Industrial Applications
Coherent Corp. announced significant advancements in its silicon carbide (SiC) epitaxy capabilities, enabling the production of power devices up to 10kV. These new 150mm and 200mm thick epitaxy platforms are designed to meet the escalating demand for more efficient, higher-voltage power systems in rapidly growing sectors such as AI datacenters, renewable energy, and industrial electrification. The enhanced technology allows customers to develop more compact and energy-efficient power conversion systems, addressing critical needs for high-capacity uninterruptible power supplies and advanced power distribution. This strategic expansion reinforces Coherent's leadership in wide-bandgap semiconductor materials and supports key markets including industrial, automotive, and energy.
Key Highlights
- Coherent's new SiC epitaxy capabilities enable power devices up to 10kV for next-generation AI datacenter and industrial power applications.
- The company's latest 150mm and 200mm thick epitaxy platforms are now in production, supporting device architectures up to 10kV, with demonstrated capability extending beyond this threshold.
- These advancements address rising demand for efficient, high-voltage power systems in renewable energy, rail, fast-charging infrastructure, and grid infrastructure.
- The technology allows for more compact, energy-efficient power conversion systems for multi-megawatt datacenters and industrial infrastructure.
- Gary Ruland, Senior Vice President of Silicon Carbide LLC, stated that the new capability enables higher efficiency and power density in critical applications like energy infrastructure and AI datacenter power distribution.
- Coherent continues to expand its silicon carbide technology portfolio, from substrates to advanced epitaxy, reinforcing its leadership in wide-bandgap semiconductor materials across industrial, automotive, and energy markets.
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