New LaunchMay 18, 2026, 08:32 AM
Navitas to Showcase New GaN & SiC Products for AI, Energy at PCIM 2026
AI Summary
Navitas Semiconductor is set to showcase its latest GaN and SiC power semiconductors at PCIM 2026, targeting advancements in AI data centers, energy and grid infrastructure, and industrial electrification. The company will highlight new GaNFast FETs, expanded GaNSafe, GaNSlim, and Bi-directional GaN IC families, alongside 5th-generation GeneSiC TAP MOSFETs. Demonstrations will include high-efficiency power delivery solutions for AI data centers, such as a 20 kW 800 V-to-6 V board with 97.5% peak efficiency and a 10 kW 800 V-to-50 V platform achieving 98.5% peak efficiency and 2.1 kW/in³ power density.
Key Highlights
- Navitas will showcase its latest GaN and SiC products at PCIM 2026 for AI data center, energy, and industrial electrification.
- Product highlights include new GaNFast FETs from 0.8 mOhms at 100 V to 11 mOhms at 650 V.
- Expanded offerings across GaNSafe, GaNSlim, and Bi-directional GaN IC product families will be presented.
- New 3300 V, 2300 V, and 1200 V Trench Assisted Planar (TAP) SiC devices and 5th-gen GeneSiC TAP MOSFETs will be featured.
- A 20 kW 800 V-to-6 V AI data center power delivery board aiming for 97.5% peak efficiency will be exhibited.
- A 10 kW 800 V-to-50 V DC-DC platform with 2.1 kW/in³ power density and 98.5% peak efficiency will be shown.
- Two SST topologies for grid and energy infrastructure, enabled by GeneSiC UHV and HV technology, will be demonstrated.
- Industrial electrification and motor control inverter solutions based on GaNSense Motor Drive ICs will be showcased.
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